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Gyeong Seon Hwang, 68Anaheim, CA

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De Novo Processing Of Electronic Materials

US Patent:
2002018, Dec 12, 2002
Filed:
Mar 28, 2002
Appl. No.:
10/113919
Inventors:
William Goddard - Pasadena CA, US
Gyeong Hwang - Austin TX, US
International Classification:
B29C045/00
US Classification:
700/200000
Abstract:
Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentrations of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.

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