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Jin S Liu, 55Flushing, NY

Known as:
Jin Song Liu
Related to:
Weilin Chiang 54 Hsin Liu Liyun Chiang 72 Weiwei Chiang 55 Hsin Liu 69 Hsinchu Liu Lu Liu 51 Chung Chiang 49 Xian Liu 64

Jin Liu Phones & Addresses

Bayside, NY   

Hempstead, NY   

Staunton, VA   

Charlottesville, VA   

Jamaica, NY   

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Mentions for Jin S Liu

Career records & work history

Lawyers & Attorneys

Jin Liu Photo 1

Jin Liu - Lawyer

Office:
Carlton Fields
Specialties:
Probate & Trust, Acquisitions and Divestitures, Business Law, Corporate Law, Mergers, Real Estate, Real Property, Securities, Taxation, Securities Offerings
ISLN:
918448178
Admitted:
2005
Law School:
China Southwest University of Political Science and Law, Chongqing, China, LL.B., 2002; University of Missouri at Kansas City, J.D., 2005

Medicine Doctors

Jin Liu Photo 2

Jin Lan Liu, Brooklyn NY - RN (Registered Nurse)

Specialties:
Nursing (Registered Nurse)
Address:
1508 Avenue U, Brooklyn, NY 11229
718-3763383 (Phone) 718-3763385 (Fax)
Languages:
English

Jin H. Liu

Specialties:
Anesthesiology
Work:
Moffitt Medical GroupSenior Adult Oncology Program
12902 Usf Magnolia Dr, Tampa, FL 33612
813-7456769 (phone) 813-7453730 (fax)
Site
Education:
Medical School
Tianjin Med Univ, Tianjin City, Tianjin, China
Graduated: 1987
Languages:
English, Spanish
Description:
Dr. Liu graduated from the Tianjin Med Univ, Tianjin City, Tianjin, China in 1987. She works in Tampa, FL and specializes in Anesthesiology. Dr. Liu is affiliated with Moffitt Cancer Center.

License Records

Jin Liu

Address:
136-20 60 Ave, Flushing, NY 11355

Jin Liu resumes & CV records

Resumes

Jin Liu Photo 25

Jin Liu - Westport, CT

Work:
EMMANUEL CHURCH - Philadelphia, PA 2002 to 2004
GENERAL COUNSEL BALLARD SPAHR ANDREWS & INGERSOLL LLP - Bryn Mawr, PA 1999 to 2002
SOLO PRACTITIONER Business and Finance Department Sep 1992 to Apr 1999
Associate LEBOEUF, LAMB, LEIBY & MACRAE - New York, NY Sep 1988 to Sep 1992
Associate - Corporate Department
Education:
NEW YORK UNIVERSITY SCHOOL OF LAW 1988
J.D.
Jin Liu Photo 26

Jin Liu - Brooklyn, NY

Work:
New York Methodist Hospital 2011 to Present New York Methodist Hospital 2012 to 2012 CUNY - New York, NY 2010 to 2011 New York Methodist Hospital 1997 to 2010
Medical Technologist intern Jinan Unverisity - GuangZhou, CN 1992 to 1996
Medical Technologist
Education:
JInan university - China, ME 1992 to 1996
BA in Biology

Publications & IP owners

Us Patents

Non-Bridging Contact Via Structures In Proximity

US Patent:
2018006, Mar 8, 2018
Filed:
Nov 13, 2017
Appl. No.:
15/811198
Inventors:
- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US
International Classification:
H01L 23/48
H01L 21/768
H01L 21/308
H01L 21/033
H01L 21/74
H01L 21/311
Abstract:
A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

Non-Bridging Contact Via Structures In Proximity

US Patent:
2016003, Feb 4, 2016
Filed:
Oct 15, 2015
Appl. No.:
14/884076
Inventors:
- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 23/48
Abstract:
A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

Voltage Contrast Inspection Of Deep Trench Isolation

US Patent:
2015004, Feb 12, 2015
Filed:
Oct 24, 2014
Appl. No.:
14/522626
Inventors:
- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US
International Classification:
H01L 21/66
H01L 49/02
H01L 21/762
US Classification:
257 48, 438 18
Abstract:
A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

Voltage Contrast Inspection Of Deep Trench Isolation

US Patent:
2014014, May 29, 2014
Filed:
Nov 28, 2012
Appl. No.:
13/686954
Inventors:
- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/66
US Classification:
257 48, 438 18, 438386
Abstract:
A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

Possible Relatives

Cynthia W Liu  David Liu  Dawei L Liu  Debbie T Liu  Debra J Liu  Danny K Liu  Dennis Y Liu  Jin H Lee  Jin Suh  Jin S Park 

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