Jiong ChenFlushing, NY

7112789, Sep 26, 2006

May 6, 2005

11/123924

Nicholas R. White - Manchester MA, US
Jiong Chen - San Jose CA, US

H01J 37/317
H01J 37/147
H01J 49/20

250294, 250298, 250299, 25049221, 335210, 335213

The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry. Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis. There is no fundamental limit to the aspect ratio of the beam that can be analyzed.

7772571, Aug 10, 2010

Oct 8, 2007

11/868851

Cheng-Hui Shen - Taiwan, CN
Donald Wayne Berrian - Topsfield MA, US
Jiong Chen - San Jose CA, US

Advanced Ion Beam Technology, Inc. - San Jose CA

G21K 5/10
H01J 37/08
A61N 5/00
G21G 5/00
G06F 19/00

25049221, 2504923, 700 98, 700103, 700109, 700119

To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

6215125, Apr 10, 2001

Sep 16, 1998

9/154426

Jiong Chen - Beverly MA
Brian S. Freer - Medford MA
John F. Grant - Beverly MA
Lawrence T. Jacobs - Jericho VT
Joseph L. Malenfant - Colchester VT

International Business Machines Corporation - Armonk NY

H01J 2700
H01J 3730

25045221

The present invention provides a method of extending, i. e. prolonging, the operating lifetime of hot cathode discharge ion source by utilizing and introducing a nitrogen-containing co-bleed gas into an ion implantation apparatus which contains at least a hot cathode discharge ion source and an ion implantation gas such as GeF. sub. 4.

5703375, Dec 30, 1997

Aug 2, 1996

8/691467

Jiong Chen - Beverly MA
Victor M. Benveniste - Gloucester MA

Eaton Corporation - Cleveland OH

H01J 37317
H01L 21265

25049221

Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.

6204508, Mar 20, 2001

Aug 7, 1998

9/130662

Jiong Chen - Beverly MA
Ronald A. Capodilupo - Beverly MA
Scott Barusso - Gloucester MA
Philip J. Ring - Beverly MA
Kui Jin - Beverly MA

Axcelis Technologies, Inc. - Beverly MA

H01J 37317

250423R

A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion. The closed loop magnetic field lines (B) confine electrons (E) emitted from the surface of the thermally emissive portion within the confines of the coils.

5814819, Sep 29, 1998

Jul 11, 1997

8/891688

Frank Sinclair - Quincy MA
Victor Benveniste - Gloucester MA
Jiong Chen - Beverly MA

Eaton Corporation - Cleveland OH

H01J 2702

25049221

An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.

6050218, Apr 18, 2000

Sep 28, 1998

9/162096

Jiong Chen - Beverly MA
Peter Kellerman - Essex MA
A. Stuart Denholm - Lincoln MA

Eaton Corporation - Cleveland OH

C23C 1600

118723E

Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.