Loren N Pfeiffer, 8528 Longview Dr, Princeton, NJ 08540

6349454, Feb 26, 2002

Jul 29, 1999

09/363527

Michael James Manfra - Short Hills NJ
Loren Neil Pfeiffer - Morristown NJ
Kenneth William West - Mendham NJ

Agere Systems Guardian Corp. - Orlando FL

H01L 4100

29 2535, 427100

A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

6495409, Dec 17, 2002

Dec 23, 1999

09/472331

Michael J. Manfra - Short Hills NJ
Loren N. Pfeiffer - Morristown NJ
Kenneth W. West - Mendham NJ

Agere Systems Inc. - Allentown PA

H01L 218238

438216, 438261, 438591, 438240, 438585, 257410, 257324

An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600Â C. and subsequently annealed at a substrate temperature of about 950Â C.

6661039, Dec 9, 2003

May 18, 2001

09/861055

Mark Lee - Berkeley Heights NJ
Loren Neil Pfeiffer - Morristown NJ
Kenneth William West - Mendham NJ

Lucent Technologies Inc. - Murray Hill NJ

H01L 31072

257201, 257194, 257192, 257183, 257189, 257 20, 257 24, 257195, 438285, 438590, 438 60

A hot-electron bolometric mixer/detector, which uses the nonlinearities of the heated two-dimensional electron gas medium, is described. Electrons in the illustrative embodiment of the present invention are âvelocity-cooledâ rather than âdiffusion-cooledâ or âphonon-cooledâ like hot-electron bolometric mixer/detectors in the prior art. The illustrative embodiment is velocity-cooled when the elastic mean-free path of the electrons is greater than the channel length, L, of the mixer/detector. In this case, the motion of the hot electrons is more accurately modeled by their speed rather than in accordance with diffusion models. This leads to a mixer/detector with a wider modulation bandwidth at a lower power than is exhibited by mixer/detectors in the prior art.

6921726, Jul 26, 2005

Mar 13, 2002

10/097092

Hidefumi Akiyama - Tokyo, JP
Loren Neil Pfeiffer - Morristown NJ, US
Kenneth William West - Mendham NJ, US

Lucent Technologies Inc. - Murray Hill NJ

H01L021/31

438767, 438493, 438761, 438763

A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.

7341692, Mar 11, 2008

Apr 30, 2005

11/119519

Robert L. Willett - Warren NJ, US
Kirk W. Baldwin - Springfield NJ, US
Loren N. Pfeiffer - Morristown NJ, US

Lucent Technologies Inc. - Murray Hill NJ

G01N 27/00
G01N 33/53
G01N 33/551
G01N 33/552
G01N 33/553

422 8201, 422 8202, 422 8203, 422 8204, 435 71, 436518, 436524, 436525, 436527, 436149

Apparatus comprising a surface site layer having a distal site end, wherein the distal site end includes a substantially inorganic surface having a chemical composition selected from a group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site layer is interposed, wherein the distal site end is distanced from the interlayers, first and second supports, wherein the surface site layer and the interlayers are interposed between the first and second supports; and first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; wherein the conductors are capable of applying an external voltage potential across the polypeptide bonding region.

8633092, Jan 21, 2014

Dec 12, 2012

13/712179

Kirk William Baldwin - Murray Hill NJ, US
Loren N. Pfeiffer - Morristown NJ, US
Kenneth William West - Mendham Township NJ, US

Alcatel Lucent - Paris

H01L 21/20
H01L 29/15
H01L 33/00

438468, 438478, 257 14, 257 17, 257E29072, 257E29076, 257E33008, 257E2109

An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e. g. , intrinsic semiconductor.

2003003, Feb 13, 2003

Oct 7, 2002

10/265867

Michael Manfra - Short Hills NJ, US
Loren Pfeiffer - Morristown NJ, US
Kenneth West - Mendham NJ, US

H01L029/76

257/213000

An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600 C. and subsequently annealed at a substrate temperature of about 950 C.

4715672, Dec 29, 1987

Jan 6, 1986

6/816199

Michel A. Duguay - Fair Haven NJ
Thomas L. Koch - Middletown NJ
Yasuo Kokubun - Yokohama, JP
Loren N. Pfeiffer - Morristown NJ

American Telephone and Telegraph Company - Murray Hill NJ

G02B 610

350 9612

A planar silicon dioxide waveguide with low loss for the TE mode has been built on a silicon wafer by separating the waveguide from the substrate with a relatively thin layer of polycrystalline silicon and a layer of silicon dioxide having a combined thickness less than that of the waveguide. The separating layers provide a high antiresonant reflectivity which is operative over a broad range of wavelengths.