Inventors:
- Santa Clara CA, US
Carmen LEAL CERVANTES - Mountain View CA, US
Feng CHEN - San Jose CA, US
Lu CHEN - Cupertino CA, US
Wenjing XU - San Jose CA, US
Aravind KAMATH - San Jose CA, US
Cheng-Hsiung Matthew TSAI - Cupertino CA, US
Tae Hong HA - San Jose CA, US
Alexander JANSEN - San Jose CA, US
Xianmin TANG - San Jose CA, US
International Classification:
C23C 14/56
H01L 21/02
H01L 21/67
H01J 37/32
Abstract:
Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.