Shaofeng Chen, 68Austin, TX

2003010, Jun 12, 2003

Dec 6, 2001

10/006423

Ruben Diaz - Sterling VA, US
Shaofeng Chen - Austin TX, US

Applied Materials, Inc.

C23C014/34
B21D033/00

029/017200, 204/298110

A method and apparatus for fabricating a wafer spacing mask and a substrate support chuck. Such apparatus is a stencil containing a plurality of dual counterbored apertures that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures' openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.

2010007, Mar 25, 2010

Sep 24, 2008

12/236768

TIEN FAK TAN - Fremont CA, US
Lun Tsuei - Mountain View CA, US
Shaofeng Chen - Austin TX, US
Felix Rabinovich - Campbell CA, US
Dmitry Lubomirsky - Cupertino CA, US
Kimberly Hinckley - Mountain View CA, US

Applied Materials, Inc. - Santa Clara CA

B05B 1/00
B05D 1/02
B05B 1/14
B21D 53/00

298901

A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

2023011, Apr 13, 2023

Oct 8, 2021

17/450418

- Santa Clara CA, US
Nyi Oo MYO - San Jose CA, US
Hui CHEN - Tempe AZ, US
Huy D. NGUYEN - San Ramon CA, US
Shaofeng CHEN - Austin TX, US
Xinning LUAN - Tempe AZ, US
Kirk Allen FISHER - Tempe AZ, US
Aimee S. ERHARDT - Tempe AZ, US
Shawn Joseph BONHAM - Mesa AZ, US
Philip Michael AMOS - Apache Junction AZ, US
James M. AMOS - Apache Junction AZ, US

C23C 16/458

A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

2021033, Nov 4, 2021

Apr 27, 2021

17/241241

- Santa Clara CA, US
Sheng Michael Guo - San Mateo CA, US
Marek W. Radko - San Jose CA, US
Steven Victor Sansoni - Livermore CA, US
Nagendra Madiwal - Cupertino CA, US
Matvey Farber - Redwood City CA, US
Pingping Gou - Foster City CA, US
Song-Moon Suh - San Jose CA, US
Jeffrey C. Hudgens - San Francisco CA, US
Yuji Murayama - Los Gatos CA, US
Anurag Bansal - Fremont CA, US
Shaofeng Chen - Austin TX, US
Michael Kuchar - Georgetown TX, US

B24B 7/07
B24B 1/00

A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

2015038, Dec 31, 2015

Jun 23, 2015

14/747367

- Santa Clara CA, US
Dmitry LUBOMIRSKY - Cupertino CA, US
Kirby H. FLOYD - San Jose CA, US
Son T. NGUYEN - San Jose CA, US
David PALAGASHVILI - Mountain View CA, US
Alexander TAM - Union City CA, US
Shaofeng CHEN - Austin TX, US

H01J 37/32

Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.