Siddhartha Ghosh, 481810 Selby Ave UNIT 206, Los Angeles, CA 90025

2022021, Jul 7, 2022

Dec 22, 2021

17/559489

- Chicago IL, US
Siddhartha Ghosh - Los Angeles CA, US

The Boeing Company - Chicago IL

H04B 7/06
H01Q 3/38

Systems, methods, and methods of fabricating can provide an axially symmetric high-density beamforming architecture. The beamforming architecture can include pluralities of symmetric beamforming layers having integrated electronics. The beamforming layers can be incrementally rotated and stacked with respect to each other in three-dimensions (3D) to provide a high-density topology capable of forming thousands of beams in a phased array antenna. The beamforming layers provide signal/beam pathways from a group (or sub-group) of signal interfaces on an input side of the beamforming layer to a corresponding group of signal interfaces on an output side of the beamforming layer. The beamforming architecture can also include a plurality of beam routing layers that mate with the plurality of beamforming layers to route the signals from a plurality of input beamforming layers to a plurality of output beamforming layers.

2017019, Jul 6, 2017

Jan 6, 2016

14/989590

- Waltham MA, US
Justin Gordon Adams Wehner - Goleta CA, US
Kelly Jones - Goletta CA, US
Siddhartha Ghosh - Los Angeles CA, US

Raytheon Company - Waltham MA

G01T 3/08
G01T 1/24

A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.

2017001, Jan 12, 2017

Jul 7, 2015

14/792962

- Waltham MA, US
Siddhartha Ghosh - Woodland Hills CA, US

RAYTHEON COMPANY - Waltham MA

H01L 31/107
H01L 31/0352
G06F 17/50
H01L 31/0304

In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.

2015034, Dec 3, 2015

May 30, 2014

14/291098

- Waltham MA, US
Siddhartha Ghosh - Woodland Hills CA, US

RAYTHEON COMPANY - Waltham MA

H01L 27/146
G02B 27/28

A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.