Siddhartha Ghosh resumes & CV records
Resumes
Siddhartha Ghosh
Siddhartha Ghosh3210 Society Dr, Claymont, DE 19703
Siddhartha Ghosh Phones & Addresses
Claymont, DE
Woodland Hills, CA
Wilmington, DE
Mentions for Siddhartha Ghosh
Publications & IP owners
Us Patents
Axially Symmetric High-Density Beamforming Topology
US Patent:
2022021, Jul 7, 2022
Filed:
Dec 22, 2021
Appl. No.:
17/559489
Inventors:
- Chicago IL, US
Siddhartha Ghosh - Los Angeles CA, US
Siddhartha Ghosh - Los Angeles CA, US
Assignee:
The Boeing Company - Chicago IL
International Classification:
H04B 7/06
H01Q 3/38
H01Q 3/38
Abstract:
Systems, methods, and methods of fabricating can provide an axially symmetric high-density beamforming architecture. The beamforming architecture can include pluralities of symmetric beamforming layers having integrated electronics. The beamforming layers can be incrementally rotated and stacked with respect to each other in three-dimensions (3D) to provide a high-density topology capable of forming thousands of beams in a phased array antenna. The beamforming layers provide signal/beam pathways from a group (or sub-group) of signal interfaces on an input side of the beamforming layer to a corresponding group of signal interfaces on an output side of the beamforming layer. The beamforming architecture can also include a plurality of beam routing layers that mate with the plurality of beamforming layers to route the signals from a plurality of input beamforming layers to a plurality of output beamforming layers.
Dual Mode Iii-V Superlattice Avalanche Photodiode
US Patent:
2017001, Jan 12, 2017
Filed:
Jul 7, 2015
Appl. No.:
14/792962
Inventors:
- Waltham MA, US
Siddhartha Ghosh - Woodland Hills CA, US
Siddhartha Ghosh - Woodland Hills CA, US
Assignee:
RAYTHEON COMPANY - Waltham MA
International Classification:
H01L 31/107
H01L 31/0352
G06F 17/50
H01L 31/0304
H01L 31/0352
G06F 17/50
H01L 31/0304
Abstract:
In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.
Dynamic Polarizer
US Patent:
2015034, Dec 3, 2015
Filed:
May 30, 2014
Appl. No.:
14/291098
Inventors:
- Waltham MA, US
Siddhartha Ghosh - Woodland Hills CA, US
Siddhartha Ghosh - Woodland Hills CA, US
Assignee:
RAYTHEON COMPANY - Waltham MA
International Classification:
H01L 27/146
G02B 27/28
G02B 27/28
Abstract:
A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.
NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.