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Tim Chaoming Chen, 42San Mateo, CA

Known as:
Tim C Chen Tim Chen Revocable
Related to:
Max Justin Beck 62

Tim Chen Phones & Addresses

San Mateo, CA   

Hillsborough, CA   

44 Levant St, San Francisco, CA 94114   

Dunwoody, GA   

New York, NY   

Mountain View, CA   

Redwood City, CA   

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Mentions for Tim Chaoming Chen

Career records & work history

Real Estate Brokers

Tim Chen Photo 1

Tim Chen

Specialties:
Buyer's Agent, Listing Agent
Work:
tim
Shenan Rd ,Futian,Shenzhen ,China
951-2138888 (Office)

Tim Chen resumes & CV records

Resumes

Tim Chen Photo 50

Tim Chen - San Francisco, CA

Work:
RAND Corporation May 2009 to 2000
Collaboration Applications Administrator RAND Corporation - Santa Monica, CA May 2008 to May 2009
SharePoint Administrator FTTA - Anaheim, CA Aug 2006 to Jan 2008
Mentor/Trainee Central American Medical Outreach, Inc. - Austin, TX Aug 2005 to May 2006
Student Engineer
Education:
Columbia University - New York, NY 2012
M.S. in Biomedical Engineering University of Texas at Austin - Austin, TX 2006
B.S. in Mechanical Engineering, Pre-Medicine
Tim Chen Photo 51

Tim Chen - Parsippany, NJ

Work:
Evergreen Shipping Agency (America) Corp Nov 2006 to 2000
General Staff Round-The-World Logistics Sep 2005 to Nov 2006
Office Clerk China Airline - Jamaica, NY Jun 2000 to Sep 2005
Cargo Agent Great Eastern Bank - Queens, NY Jul 1998 to May 2000
Teller
Education:
Long Island Business Institute May 2005
Associate in Businesses Management

Publications & IP owners

Us Patents

Dielectric Material Having Carborane Derivatives

US Patent:
2006007, Apr 6, 2006
Filed:
Sep 30, 2004
Appl. No.:
10/957231
Inventors:
Michael Haverty - Mountain View CA, US
Tim Chen - Phoenix AZ, US
Sadasivan Shankar - Cupertino CA, US
International Classification:
H01L 23/58
US Classification:
257632000
Abstract:
Numerous embodiments of an apparatus and method of a dielectric material having a low dielectric constant and good mechanical strength are described. In one embodiment a dielectric material having multiple porous regions is disposed over a substrate. A caged structure is bridged within the plurality of pores. In one particular embodiment, the caged structure may be carborane or a carborane derivative.

Dielectric Material Having Carborane Derivatives

US Patent:
2007022, Sep 27, 2007
Filed:
Oct 17, 2006
Appl. No.:
11/582720
Inventors:
Michael Haverty - Mountain View CA, US
Tim Chen - Phoenix AZ, US
Sadasivan Shankar - Cupertino CA, US
International Classification:
H01L 21/31
US Classification:
438758000
Abstract:
Numerous embodiments of an apparatus and method of a dielectric material having a low dielectric constant and good mechanical strength are described. In one embodiment a dielectric material having multiple porous regions is disposed over a substrate. A caged structure is bridged within the plurality of pores. In one particular embodiment, the caged structure may be carborane or a carborane derivative.

Shared-Gate Vertical-Tft For Vertical Bit Line Array

US Patent:
2015003, Feb 5, 2015
Filed:
Jul 24, 2014
Appl. No.:
14/340454
Inventors:
- Milpitas CA, US
George Samachisa - San Jose CA, US
Tim Chen - Milpitas CA, US
Perumal Ratnam - Fremont CA, US
International Classification:
G11C 13/00
H01L 27/24
US Classification:
365148, 257 5
Abstract:
A non-volatile storage device comprises: a substrate; a monolithic three dimensional array of memory cells; word lines connected to the memory cells; global bit lines; vertical bit lines connected to the memory cells; and a plurality of double gated vertically oriented select devices. The double gated vertically oriented select devices are connected to the vertical bit lines and the global bit lines so that when the double gated vertically oriented select devices are activated the vertical bit lines are in communication with the global bit lines. Each double gated vertically oriented select device has two gates that are offset from each other with respect to distance to the substrate. Both gates for the double gated vertically oriented select device need be in an “on” condition for the double gated vertically oriented select devices to be activated.

Possible Relatives

Cynthia Chen  David Chen  Cyril X Chen  Cyrus Y Chen  Dawei W Chen  De T Chen  Dafang Chen  Tim C Johnson  Tim R White  Tim P Jolly 

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