Ken Cheong Cheah, 581324 Clayton Rd, San Jose, CA 95127

6243291, Jun 5, 2001

Feb 15, 2000

9/504186

Ken C. Cheah - Sunnyvale CA

Advanced Micro Devices, Inc. - Sunnyvale CA

G11C 1134

36518512

A method for operating a page mode memory device includes decoding an address defining a page for access and sensing first data on a first portion of the page. The first data is then produced at an output. Substantially simultaneously, second data is sensed on a second portion of the page and subsequently the second data is produced at the output. In this manner, the current drain and noise within the memory device are reduced to improve performance and reliability of the memory device.

2018025, Sep 6, 2018

Nov 17, 2017

15/816546

- Plano TX, US
Idan Alrod - Herzliya, IL
Amul Desai - Milpitas CA, US
Jun Wan - San Jose CA, US
Ken Cheah - San Jose CA, US

SanDisk Technologies LLC - Plano TX

G11C 16/34
G11C 16/16
G11C 16/26

Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of the memory cells can shift depending on the coupled up state of the word lines. In one approach, for a read operation, a representative word line voltage in a block is detected and a corresponding set of read voltages is selected. In another approach, a pre-read voltage pulse is applied to a selected word line in response to a read command, just prior to reading the selected cells. In another approach, a voltage pulse is periodically applied to each word line in a block to provide the word lines in a coupled up state. In another approach, a soft erase is performed after a read operation to prevent coupling up of the word lines.