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Viren K Patel, 643501 Normandy Hills Cir, Greensboro, NC 27410

Known as:
Viren Imisa Patel Viren K Desai Viren K Imisa Kantibhai Patel Viren Patel Viren Desai Viren
Related to:
Alka K Patel 63

Viren Patel Phones & Addresses

3501 Normandy Hills Cir, Greensboro, NC 27410    732-6668836   

Martinsville, VA   

24 Parkside Dr, Jamesburg, NJ 08831    732-5219048   

East Brunswick, NJ   

Edison, NJ   

Flushing, NY   

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Mentions for Viren K Patel

Career records & work history

Medicine Doctors

Viren B. Patel

Specialties:
Internal Medicine
Work:
Rancho Internal Medicine
7010 Smoke Rnch Rd STE 120, Las Vegas, NV 89128
702-4777044 (phone) 702-3881664 (fax)
Education:
Medical School
Kansas City University of Medicine and Biosciences College of Osteopathic Medicine
Graduated: 1997
Procedures:
Cardiac Stress Test, Lumbar Puncture, Vaccine Administration
Conditions:
Anemia, Fractures, Dislocations, Derangement, and Sprains, Hypertension (HTN), Intervertebral Disc Degeneration, Ischemic Stroke, Osteoarthritis, Peripheral Nerve Disorders, Pneumonia, Acute Myocardial Infarction (AMI), Acute Renal Failure, Alcohol Dependence, Atrial Fibrillation and Atrial Flutter, Calculus of the Urinary System, Cardiac Arrhythmia, Cardiomyopathy, Cholelethiasis or Cholecystitis, Chronic Renal Disease, Dementia, Diabetes Mellitus (DM), Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Diverticulitis, Diverticulosis, Epilepsy, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Heart Failure, Hemorrhagic stroke, HIV Infection, Hypothyroidism, Inflammatory Bowel Disease (IBD), Intestinal Obstruction, Intracranial Injury, Ischemic Heart Disease, Migraine Headache, Multiple Sclerosis (MS), Osteomyelitis, Overweight and Obesity, Parkinson's Disease, Peptic Ulcer Disease, Pulmonary Embolism, Rheumatoid Arthritis, Septicemia, Skin and Subcutaneous Infections, Spinal Stenosis, Transient Cerebral Ischemia, Venous Embolism and Thrombosis
Languages:
English, Spanish
Description:
Dr. Patel graduated from the Kansas City University of Medicine and Biosciences College of Osteopathic Medicine in 1997. He works in Las Vegas, NV and specializes in Internal Medicine.

Viren Patel resumes & CV records

Resumes

Viren Patel Photo 48

Owner & Manager At Viren Productions

Position:
Owner / Photographic Marketer at Viren Productions
Location:
Austin, Texas
Industry:
Marketing and Advertising
Work:
Viren Productions - Sumter, South Carolina Area since Feb 2010
Owner / Photographic Marketer Spanish Vines - Columbia, South Carolina Area Jan 2010 - May 2010
Industry Analyst Deluxe Motel Jan 2009 - Jan 2010
Assistant Manager / Front Desk Manager
Education:
University of South Carolina - The Moore School of Business 2004 - 2010
Bachelor of Science, Entrepreneurship Business Management, Marketing, Directed Study in Science
Skills:
Photoshop, Photography, Graphic Design, Social Media Marketing, Advertising, Marketing Strategy, PowerPoint, Microsoft Office
Interests:
I.T. Skills: Microsoft Windows, Mac OSX, Word, Excel, PowerPoint, Adobe Photoshop CS5, Adobe Lightroom 3 Travel: England, India, Mexico
Languages:
Gujarati
Viren Patel Photo 49

Buyer/Planner At Dorman Products

Position:
Buyer/Planner at Dorman Products
Location:
Lansdale, Pennsylvania
Industry:
Logistics and Supply Chain
Work:
Dorman Products since Jul 2012
Buyer/Planner Paoli Pike Sunoco - Paoli, Pennsylvania Jun 2008 - Aug 2011
Assistant Manager Whitpain Beverage - Blue Bell, Pennsylvania May 2009 - Aug 2010
Assistant Manager
Education:
Penn State University 2008 - 2012
Bachelor of Science (B.S.), Supply Chain and Information Systems
Skills:
Microsoft Excel, Microsoft Access, Microsoft Office, Teamwork, Inventory Management, Supply Chain Management, Time Management, Customer Service
Languages:
Gujarati
Viren Patel Photo 50

Viren Patel

Location:
United States
Viren Patel Photo 51

Viren At Munjal

Position:
viren at munjal
Location:
United States
Industry:
Automotive
Work:
munjal
viren
Education:
dme
Viren Patel Photo 52

Viren Patel - Kennesaw, GA

Work:
JENNISON ASSOICATES Sep 2013 to 2000
Eagle Pace Business Analyst JENNISON ASSOICATES - New York, NY Sep 2006 to Sep 2010
Accounting /Billing Manager JENNISON ASSOICATES - New York, NY Sep 2006 to Aug 2008
Business Unit Controller, Credit Products - Associate DEUTSCHE BANK., Deutsche Asset Management - New York, NY Nov 1999 to Sep 2006 DEUTSCHE BANK., Deutsche Asset Management Jul 2005 to Jul 2006
Assistant Vice President DEUTSCHE BANK., Deutsche Asset Management Nov 1999 to Jun 2005
Accounting /Billing Administrator
Education:
WILLIAM PATERSON UNIVERSITY - Wayne, NJ 1999
B.S. in Business Administration
Viren Patel Photo 53

Viren Patel - Jersey City, NJ

Work:
Integrity House - Secaucus, NJ 2014 to 2014
Medical Biller & Coder Extern Rite Aid Pharmacy - Jersey City, NJ 2011 to 2014
Shift Supervisor
Education:
Anthem Institute 2014 to 2014
Diploma in Medical Billing and Coding Dickinson High School 2009
High School Diploma
Viren Patel Photo 54

Viren Patel - Edison, NJ

Work:
Robert Half Technology Feb 2014 to 2000
PC Technician Mindlance INC May 2013 to 2000
Help Desk Support R.H.Patel Education Campus Jan 2011 to Feb 2013
Database Administrator Nanotech Inc - Surat, Gujarat Nov 2009 to Dec 2010
Software Developer Management System Sep 2008 to Oct 2009
GSFC Sales & Marketing
Education:
Sardar Patel University 2007
Master of Computer Application
Viren Patel Photo 55

Viren Patel

Location:
United States

Publications & IP owners

Us Patents

Transistor Structure For Improved Base-Collector Junction Characteristics

US Patent:
5543655, Aug 6, 1996
Filed:
Jun 9, 1994
Appl. No.:
8/350611
Inventors:
Viren C. Patel - Belle Mead NJ
Assignee:
SGS-Thomson Microelectronics, Inc. - Carrollton TX
International Classification:
H01L 2973
H01L 29861
US Classification:
257514
Abstract:
The present invention is directed to an improved base-collector junction transistor structure capable of higher junction breakdown voltages and lower junction capacitances than bipolar transistors of the prior art. A narrow trench is used to positively affect junction breakdown voltage and junction capacitance. The trench allows the beneficial characteristics of both depletion ring and mesa structures to be utilized. Depletion zone profiles that negatively affect junction breakdown voltage are minimized by using the trench and a depletion enhancing channel.

Method For Fabricating A Radio Frequency Power Mosfet Device Having Improved Performance Characteristics

US Patent:
6207508, Mar 27, 2001
Filed:
Aug 3, 1999
Appl. No.:
9/366246
Inventors:
Viren C. Patel - Belle Mead NJ
Assignee:
STMicroelectronics, Inc. - Carrollton TX
International Classification:
H01L21/336
US Classification:
438268
Abstract:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET has an increased distance between gate and drain regions of the device in order to decrease the device gate to drain capacitance C. sub. gd. The distance between the gate and drain regions is increased by selective doping of a polysilicon layer of the gate to produce at least two polysilicon gate regions separated by a region of undoped polysilicon that is positioned over a substantial portion of the drain region that resides between the channel portions of the body region of the device. The addition of a contact oxide layer formed directly above the region of undoped polysilicon further increases the distance between gate and drain. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.

Radio Frequency Power Mosfet Device Having Improved Performance Characteristics

US Patent:
5977588, Nov 2, 1999
Filed:
Oct 31, 1997
Appl. No.:
8/962343
Inventors:
Viren C. Patel - Belle Mead NJ
Assignee:
STMicroelectronics, Inc. - Carrollton TX
International Classification:
H01L 2976
H01L 2994
H01L 31062
US Classification:
257328
Abstract:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET has an increased distance between gate and drain regions of the device in order to decrease the device gate to drain capacitance C. sub. gd. The distance between the gate and drain regions is increased by selective doping of a polysilicon layer of the gate to produce at least two polysilicon gate regions separated by a region of undoped polysilicon that is positioned over a substantial portion of the drain region that resides between the channel portions of the body region of the device. The addition of a contact oxide layer formed directly above the region of undoped polysilicon further increases the distance between gate and drain. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.

Method For Fabricating A Radio Frequency Power Mosfet Device Having Improved Performance Characteristics

US Patent:
6232186, May 15, 2001
Filed:
Mar 23, 2000
Appl. No.:
9/534434
Inventors:
Viren C. Patel - Belle Mead NJ
Assignee:
STMicroelectronics, Inc. - Carrollton TX
International Classification:
H01L 21336
US Classification:
438268
Abstract:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET reduces the gate coverage of the drain region of the device in order to decrease the device gate to drain capacitance C. sub. gd. A significant portion of the gate overlaying the drain region is eliminated by the removal of a portion of a polysilicon layer that is disposed over a substantial portion of the drain region that resides between the channel portions of the body regions of the device. The resulting open area, that is subsequently covered by an oxide layer, separates the polysilicon gate electrodes of the device. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.

Radio Frequency Power Mosfet Device Having Improved Performance Characteristics

US Patent:
6087697, Jul 11, 2000
Filed:
Oct 31, 1997
Appl. No.:
8/962342
Inventors:
Viren C. Patel - Belle Mead NJ
Assignee:
STMicroelectronics, Inc. - Carrollton TX
International Classification:
H01L 2976
H01L 2994
H01L 31062
H01L 31113
US Classification:
257329
Abstract:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET reduces the gate coverage of the drain region of the device in order to decrease the device gate to drain capacitance C. sub. gd. A significant portion of the gate overlaying the drain region is eliminated by the removal of a portion of a polysilicon layer that is disposed over a substantial portion of the drain region that resides between the channel portions of the body regions of the device. The resulting open area, that is subsequently covered by an oxide layer, separates the polysilicon gate electrodes of the device. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.

Possible Relatives

David Patel  Dawood M Patel  Daxa R Patel  Daxaben C Patel  Daxesh T Patel  Daxeshkumar B Patel  Dayalji D Patel  Viren K Grover  Viren D Desai 

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