Vishnubhai M Patel, 68North Bergen, NJ

6337518, Jan 8, 2002

Aug 23, 1999

09/418273

Alfred Grill - White Plains NY
Vishnubhai Vitthalbhai Patel - Yorktown NY

International Business Machines Corporation - Armonk NY

H01L 23485

257758, 257760

An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400Â C. and has a low dielectric constant of less than 3. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

6346747, Feb 12, 2002

Jun 9, 1999

09/329004

Alfred Grill - White Plains NY
Christopher Vincent Jahnes - Monsey NY
Vishnubhai Vitthalbhai Patel - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 2348

257752, 257761, 257762, 257767

A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition process is disclosed. Electronic devices containing insulating layers of thermally stable carbon-based low dielectric constant materials that are prepared by the method are further disclosed. In order to render the carbon-based low dielectric constant film thermally stable, i. e. , at a temperature of at least 400Â C. , the films are heat treated at a temperature of not less than 350Â C. for at least 0. 5 hour. To enable the fabrication of thermally stable carbon-based low dielectric constant film, specific precursor materials such as cyclic hydrocarbons should be used, for instance, cyclohexane or benzene. The geometry of the chemical vapor deposition chamber is important in making the present invention thermally stable low dielectric constant films in order to achieve a specific bias voltage on the substrate onto which the electronic structure is formed.

6428894, Aug 6, 2002

Jun 4, 1997

08/868772

Katherina E. Babich - Chappaqua NY
Alessandro Cesare Callegari - Yorktown Heights NY
Julien Fontaine - Orleans, FR
Alfred Grill - White Plains NY
Christopher V. Jahnes - Monsey NY
Vishnubhai Vitthalbhai Patel - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

B32B 900

428408, 428212, 428216, 428336, 428446

Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1. 4 to about 2. 1 and from about 0. 1 to about 0. 6, respectively, at UV and DUV wavelengths, in particular 365, 248 and 193 nm. Moreover, the films produced by the present invention can be deposited over device topography with high conformality, and they are etchable by oxygen and/or a fluoride ion etch process. Because of their unique properties, these films can be used to form a tunable and removable antireflective coating at UV and DUV wavelengths to produce near zero reflectance at the resist/BARC coating interface. This BARC greatly improves performance of semiconductor chips.

6437443, Aug 20, 2002

Sep 27, 2001

09/966834

Alfred Grill - White Plains NY
Vishnubhai Vitthalbhai Patel - Yorktown NY
Stephen McConnell Gates - Ossining NY

International Business Machines Corporation - Armonk NY

H01L 2348

257758, 257759, 257760, 257762, 257765, 257774

A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.

6441491, Aug 27, 2002

Jan 25, 2001

09/769089

Alfred Grill - White Plains NY
David R. Medeiros - Yorktown Heights NY
Vishnubhai V. Patel - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 2348

257759, 438622

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (âPECVDâ) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcyclotetrasiloxane and cyclopentene oxide.

6448176, Sep 10, 2002

Oct 30, 2000

09/699900

Alfred Grill - White Plains NY
John Patrick Hummel - Millbrook NY
Christopher Vincent Jahnes - Monsey NY
Vishnubhai Vitthalbhai Patel - Yorktown Heights NY
Katherine Lynn Saenger - Ossining NY

International Business Machines Corporation - Armonk NY

H01L 214763

438637, 438640, 438701, 438945

The present invention relates to lithographic methods for forming a dual relief pattern in a substrate, and the application of such methods to fabricating multilevel interconnect structures in semiconductor chips by a Dual Damascene process in which dual relief cavities formed in a dielectric are filled with conductive material to form the wiring and via levels. The invention comprises a twice patterned single mask layer Dual Damascene process modified by the addition of an easy-to-integrate sidewall liner to protect organic interlevel and intralevel dielectrics from potential damage induced by photoresist stripping steps during lithographic rework. The invention further comprises a method for forming a dual pattern hard mask which may be used to form dual relief cavities for use in Dual Damascene processing, said dual pattern hard mask comprising a first set of one or more layers with a first pattern, and a second set of one or more layers with a second pattern.

6448655, Sep 10, 2002

Apr 28, 1998

09/067439

Katherina Babich - Chappaqua NY
Alessandro Callegari - Yorktown Heights NY
Stephen Alan Cohen - Wappingers Falls NY
Alfred Grill - White Plains NY
Christopher Vincent Jahnes - Monsey NY
Vishnubhai Vitthalbhai Patel - Yorktown Heights NY
Sampath Purushothaman - Yorktown Heights NY
Katherine Lynn Saenger - Ossining NY

International Business Machines Corporation - Armonk NY

H01L 2348

257759, 257760, 257767

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

6479110, Nov 12, 2002

Sep 27, 2001

09/966836

Alfred Grill - White Plains NY
Vishnubhai Vitthalbhai Patel - Yorktown NY
Stephen McConnell Gates - Ossining NY

International Business Machines Corporation - Armonk NY

H01L 2131

427577, 427579, 427489, 438680, 438681

A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.