Wei Lin Zhu, 49Scotch Plains, NJ

6340822, Jan 22, 2002

Oct 5, 1999

09/426457

Walter L. Brown - Berkeley Heights NJ
Sungho Jin - Millington NJ
Wei Zhu - Warren NJ

Agere Systems Guardian Corp. - Orlando FL

H01L 2906

257 25, 257777

A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e. g. , having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e. g. , so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

6383923, May 7, 2002

Aug 22, 2000

09/643784

Walter L. Brown - Berkeley Heights NJ
Sungho Jin - Millington NJ
Wei Zhu - Warren NJ

Agere Systems Guardian Corp. - Orlando FL

H01L 2144

438666, 438734, 438962

A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e. g. , having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e. g. , so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

6469390, Oct 22, 2002

Apr 21, 1999

09/296001

Kin Ping Cheung - Hoboken NJ
Chien-Shing Pai - Bridgewater NJ
Wei Zhu - Warren NJ

Agere Systems Guardian Corp. - Orlando FL

H01L 2348

257758, 257752, 257759, 257642, 257637

It has been discovered that for semiconductor devices such as MOSFETs, there is significant capacitive coupling in the front-end structure, i. e. , the structure from and including the device substrate up to the first metal interconnect level. The invention therefore provides a device comprising a silicon substrate, an isolation structure in the substrate (e. g. , shallow trench isolation), an active device structure (e. g. , a transistor structure), a dielectric layer over the active device structure, and a metal interconnect layer over the dielectric layer (metal-1 level). At least one of the dielectric components of the front-end structure comprise a material exhibiting a dielectric constant less than 3. 5. This relatively low dielectric constant material reduces capacitive coupling in the front-end structure, thereby providing improved properties in the device.

6504292, Jan 7, 2003

Jul 30, 1999

09/365059

Kyung Moon Choi - Scotch Plains NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ

Agere Systems Inc. - Allentown PA

H01J 113

313310, 313309, 313311, 313326, 313336, 313351, 313346 R

In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.

6538367, Mar 25, 2003

Aug 6, 1999

09/369802

Kyung Moon Choi - Scotch Plains NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ

Agere Systems Inc. - Allentown PA

H01J 102

313309, 313495, 313308

This invention is predicated on applicants discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a âlow density nanoconductor assemblyâ) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.

6741019, May 25, 2004

Oct 18, 1999

09/420157

Robert William Filas - Bridgewater NJ
Sungho Jin - Millington NJ
Gregory Peter Kochanski - Dunellen NJ
Wei Zhu - Warren NJ

Agere Systems, Inc. - Allentown PA

H01J 130

313355, 313309, 313311, 313351, 313495, 445 24

An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0. 1 m to about 10,000 m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e. g. , conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e. g. , by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.

6815876, Nov 9, 2004

Jun 23, 1999

09/338520

Sungho Jin - Millington NJ
Victor Katsap - Belle Mead NJ
Warren K. Waskiewicz - Clinton NJ
Wei Zhu - Warren NJ

Agere Systems Inc. - Allentown PA

H01J 120

313310, 313346 DC, 313349, 313337

A cathode with an improved work function, for use in a lithographic system, such as the SCALPELâ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

6869815, Mar 22, 2005

Aug 22, 2002

10/226930

Arman Gasparyan - New Providence NJ, US
Sungho Jin - San Diego CA, US
Herbert R. Shea - Washington Township NJ, US
Robert B. Van Dover - Maplewood NJ, US
Wei Zhu - Warren NJ, US

Agere Systems Inc. - Allentown PA

H01L021/00

438 29, 438 69, 438 78

The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.