Xing Yang Chen, 47Alhambra, CA

6907167, Jun 14, 2005

Jan 19, 2001

09/765544

Hwan J. Jeong - Los Altos CA, US
Xing Chen - San Jose CA, US

Gazillion Bits, Inc. - San Jose CA

G20B006/42

385 39, 385 24, 359497, 398 82

An optical interleaver is described, comprising a splitting element for splitting an incident beam into a first optical signal directed along a first path and a second optical signal directed along a second path, a first resonant element positioned along the first path, a second resonant element positioned along the second path, and a combining element positioned to receive and to interferometrically combine the outputs of the first and second resonant to produce the output signal. The optical interleaver may be implemented using a free-space configuration using a beamsplitter and a plurality of resonant cavities such as asymmetric Fabry-Perot resonators or Michelson-Gires-Tournois resonators. In an alternative preferred embodiment, the optical interleaver may be implemented in a Mach-Zender-style configuration using couplers and fiber ring resonators.

5792522, Aug 11, 1998

Sep 18, 1996

8/715109

Shu Jin - Sunnyvale CA
Xiao Chun Mu - Saratoga CA
Xing Chen - Cambridge MA
Lawrence Bourget - Reading MA

Intel Corporation - Santa Clara CA

H05H 130

427575

A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

6268916, Jul 31, 2001

May 11, 1999

9/310017

Shing Lee - Fremont CA
Mehrdad Nikoonahad - Menlo Park CA
Xing Chen - San Jose CA

Kla-Tencor Corporation - San Jose CA

G01J 400
G01N 2100

356369

The surface of a doped semiconductor wafer is heated locally by means of a pump beam whose intensity is modulated at a first frequency. The heated area is sampled by a probe beam whose intensity is modulated at a second frequency. After the probe beam has been modulated (reflected or transmitted) at the first frequency by the wafer, the modulated probe beam is detected at a frequency equal to the difference between the harmonics of the first and second frequencies to determine dose of the dopants in the wafer. Such or similar type of instrument for measuring dose may be combined with an ellipsometer, reflectometer or polarimeter for measuring dose as well as thickness(es) and/or indices of refraction in a combined instrument for measuring the same sample.

6051114, Apr 18, 2000

Jun 23, 1997

8/880467

Zheng Xu - Foster City CA
Kenny King-tai Ngan - Fremont CA
Xing Chen - Cambridge MA
John Urbahn - Hampstead NH
Lawrence P. Bourget - Reading MA

Applied Materials, Inc. - Santa Clara CA

C23C 1434

2041923

The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

2022030, Sep 29, 2022

Jun 13, 2022

17/838805

- Santa Clara CA, US
Xing CHEN - Dublin CA, US
Keith A. MILLER - Mountain View CA, US
Jothilingam RAMALINGAM - Milpitas CA, US
Jianxin LEI - Fremont CA, US

C23C 14/34
H01J 37/32

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

2022030, Sep 22, 2022

Dec 21, 2021

17/558276

- Menlo Park CA, US
Guogang Hua - San Ramon CA, US
Harikrishna Madadi Reddy - San Jose CA, US
Chung-Fu Lin - Campbell CA, US
Xing Cindy Chen - Los Altos CA, US
Sujith Srinivasan - Fremont CA, US

H04N 19/105
H04N 19/196
H04N 19/51
H04N 19/172

A disclosed computer-implemented method may include (1) selecting, from a video stream, a reference frame and a current frame, (2) collecting a reference histogram of the reference frame and a current histogram of the current frame, and (3) generating a smoothed reference histogram by applying a smoothing function to at least a portion of the reference histogram. In some examples, the computer-implemented method may also include (1) determining a similarity metric between the smoothed reference histogram and the current histogram and, (2) when the similarity metric is greater than a threshold value, applying weighted prediction during a motion estimation portion of an encoding of the video stream. Various other methods, systems, and computer-readable media are also disclosed.

2021040, Dec 30, 2021

Jun 22, 2021

17/354012

- Mountain View CA, US
Xinyue Li - San Mateo CA, US
Page Furey Crahan - San Francisco CA, US
Raymond Daly - Palo Alto CA, US
Peter Evans - Los Altos Hills CA, US
Xing Chen - Sunnyvale CA, US
Amanda McNary - Redwood City CA, US

G06F 30/20
H02J 13/00
H02J 3/00
G06T 11/20
G06T 11/00

A computer-implemented method executed by one or more processors includes receiving interconnection data for a proposed interconnection to a power grid; accessing a power grid model including a topological representation of the power grid, electrical specifications of grid components, and empirical operation characteristics; and generating, using the interconnection data for the proposed interconnection to the power grid, and the power grid model, simulated power grid data. The simulated power grid data is based on simulating operation of the power grid with the proposed interconnection coupled to a location of the power grid identified by the interconnection data during a simulated time period. The simulated power grid data includes a plurality of different temporal and spatially dependent characteristics of the power grid. The method includes evaluating, using one or more metrics, the simulated power grid data; and outputting evaluation results of the one or more metrics.

2021031, Oct 14, 2021

Apr 13, 2020

16/846505

- Santa Clara CA, US
Xing CHEN - Dublin CA, US
Keith A. MILLER - Mountain View CA, US
Jothilingam RAMALINGAM - Milpitas CA, US
Jianxin LEI - Fremont CA, US

C23C 14/34
H01J 37/32

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.