Wing Y Cheng, 416 Night Star, Irvine, CA 92603

6503368, Jan 7, 2003

Jun 29, 2000

09/607533

Arnold Kholodenko - San Francisco CA
Vijay Parkhe - Sunnyvale CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA

Applied Materials Inc. - Santa Clara CA

C23C 1600

15634551, 15634552, 15634553, 15634548, 118728, 118500, 118723 I

A substrate support comprises first, second and third sections connected to one another by first and second bonds , one of the sections comprises a surface adapted to receive a substrate. The first bond comprises a first bonding material and the second bond comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

6676760, Jan 13, 2004

Aug 16, 2001

09/930938

Arnold V. Kholodenko - San Francisco CA
Dan Katz - Agoura Hills CA
Wing L. Cheng - Sunnyvale CA

Appiled Materials, Inc. - Santa Clara CA

C23C 1600

118728, 118715, 118726, 118723 R, 15634533, 15634551

A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

6736668, May 18, 2004

Sep 15, 2000

09/663864

Arnold V. Kholodenko - San Francisco CA, 94132
Senh Thach - Union City CA, 94587
Wing L. Cheng - Sunnyvale CA, 94087
Alvin Lau - San Francisco CA, 94121
Dennis S. Grimard - Ann Arbor MI, 48103

H01R 1300

439487, 439485

An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

2003019, Oct 16, 2003

Apr 12, 2002

10/122271

Robert Wu - Pleasanton CA, US
Wing Cheng - Sunnyvale CA, US
You Wang - Cupertino CA, US
Senh Thach - Union City CA, US
Hamid Noorbakhsh - Fremont CA, US
Kwok Wong - San Jose CA, US
Jennifer Sun - Sunnyvale CA, US

Applied Materials, Inc.

C23F001/00
C23C016/00

156/345490, 156/345420, 156/345460, 156/345510, 118/7230MA, 118/7230MR, 118/728000

A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.

2008003, Feb 14, 2008

Mar 30, 2007

11/731075

Arnold Kholodenko - San Francisco CA, US
Wing Cheng - Sunnyvale CA, US
Helen Cheng - Sunnyvale CA, US
Grant Peng - Fremont CA, US
Katrina Mikhaylichenko - San Jose CA, US

LAM RESEARCH CORP. - Fremont CA

B05C 11/00
B05D 3/00

427097600, 118501000, 118073000, 427299000

In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non-metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.

6310755, Oct 30, 2001

May 7, 1999

9/307215

Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor CA
Ananda H. Kumar - Milpitas CA

Applied Materials, Inc. - Santa Clara CA

H01G 2300

361234

An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.