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Yong Guang Chen, 52San Francisco, CA

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Mentions for Yong Guang Chen

Career records & work history

Lawyers & Attorneys

Yong Chen Photo 1

Yong Chen - Lawyer

Address:
Shanghai Guohe Capital
212-8931938 (Office)
Licenses:
New York - Currently registered 2009
Education:
Columbia Law School

Medicine Doctors

Yong Chen

Specialties:
Internal Medicine
Work:
Bon Secours Charity Health System Medical GroupHudson Valley Medical Associates
26 Firemens Memorial Dr STE 215, Pomona, NY 10970
845-3540011 (phone) 845-3540147 (fax)
Education:
Medical School
Suzhou Med Coll, Suzhou City, Jiangsu, China
Graduated: 1982
Procedures:
Electrocardiogram (EKG or ECG), Vaccine Administration
Conditions:
Acute Sinusitis, Acute Upper Respiratory Tract Infections, Anemia, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Bronchial Asthma, Constipation, Dementia, Erectile Dysfunction (ED), Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gout, Heart Failure, Iron Deficiency Anemia, Non-Toxic Goiter, Osteoarthritis, Overweight and Obesity, Pneumonia, Sciatica, Substance Abuse and/or Dependency, Vitamin D Deficiency, Abdominal Hernia, Acne, Acute Bronchitis, Acute Myocardial Infarction (AMI), Acute Pancreatitis, Acute Pharyngitis, Acute Renal Failure, Alopecia Areata, Anal Fissure, Ankylosing Spondylitis (AS), Arterial Thromboembolic Disease, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Bell's Palsy, Benign Paroxysmal Positional Vertigo, Benign Polyps of the Colon, Benign Prostatic Hypertrophy, Benign Thyroid Diseases, Bipolar Disorder, Burns, Calculus of the Urinary System, Candidiasis, Candidiasis of Vulva and Vagina, Cardiac Arrhythmia, Carpel Tunnel Syndrome, Cataract, Chickenpox, Cholelethiasis or Cholecystitis, Chronic Renal Disease, Cirrhosis, Conduction Disorders, Contact Dermatitis, Dehydration, Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Diverticulitis, Epilepsy, Esophagitis, Femoral Hernia, Fractures, Dislocations, Derangement, and Sprains, Gastrointestinal Hemorrhage, Glaucoma, Hallux Valgus, Hearing Loss, Hemolytic Anemia, Hemorrhoids, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Liver Disease, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Insomnia, Internal Derangement of Knee Cartilage, Intervertebral Disc Degeneration, Intestinal Obstruction, Intracranial Injury, Irritable Bowel Syndrome (IBS), Ischemic Heart Disease, Ischemic Stroke, Keratitis, Lateral Epicondylitis, Lyme Disease, Malignant Neoplasm of Female Breast, Metabolic Syndrome, Migraine Headache, Mitral Valvular Disease, Multiple Sclerosis (MS), Osteomyelitis, Osteoporosis, Otitis Media, Parkinson's Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Pericardidtis, Peripheral Nerve Disorders, Plantar Fascitis, Poisoning by Drugs, Meds, or Biological Substances, Post Traumatic Stress Disorder (PTSD), Prostatitis, Psoriasis, Pulmonary Embolism, Restless Leg Syndrome, Scoliosis or Kyphoscoliosis, Sexually Transmitted Diseases (STDs), Sickle-Cell Disease, Skin and Subcutaneous Infections, Spinal Stenosis, Systemic Lupus Erythematosus, Tinea Pedis, Tinea Unguium, Urinary Incontinence, Varicose Veins, Venous Embolism and Thrombosis
Languages:
Chinese, English, Russian, Spanish
Description:
Dr. Chen graduated from the Suzhou Med Coll, Suzhou City, Jiangsu, China in 1982. He works in Pomona, NY and specializes in Internal Medicine. Dr. Chen is affiliated with Good Samaritan Regional Medical Center.

Yong Y. Chen

Specialties:
Internal Medicine
Work:
Cleveland ClinicChagrin Falls Family Health Center
551 Washington St, Chagrin Falls, OH 44022
440-8939393 (phone) 440-8936365 (fax)
Site
Education:
Medical School
Shanghai Second Med Univ, Shanghai City, Shanghai, China
Graduated: 1982
Procedures:
Arthrocentesis, Bone Marrow Biopsy, Destruction of Benign/Premalignant Skin Lesions, Varicose Vein Procedures
Conditions:
Diabetes Mellitus (DM), Gastroesophageal Reflux Disease (GERD), Hypothyroidism, Osteoporosis, Abdominal Hernia, Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Alopecia Areata, Anemia, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Aortic Valvular Disease, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Benign Polyps of the Colon, Benign Prostatic Hypertrophy, Bipolar Disorder, Bronchial Asthma, Candidiasis, Cardiomyopathy, Chronic Bronchitis, Chronic Renal Disease, Cirrhosis, Constipation, Contact Dermatitis, Depressive Disorders, Dermatitis, Disorders of Lipoid Metabolism, Diverticulosis, Erectile Dysfunction (ED), Fractures, Dislocations, Derangement, and Sprains, Gout, Heart Failure, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Insomnia, Intervertebral Disc Degeneration, Ischemic Heart Disease, Lateral Epicondylitis, Melanoma, Menopausal and Postmenopausal Disorders, Migraine Headache, Obstructive Sleep Apnea, Osteoarthritis, Overweight and Obesity, Parkinson's Disease, Peripheral Nerve Disorders, Pneumonia, Pulmonary Embolism, Restless Leg Syndrome, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency, Urinary Incontinence, Venous Embolism and Thrombosis, Vitamin D Deficiency
Languages:
Chinese, English
Description:
Dr. Chen graduated from the Shanghai Second Med Univ, Shanghai City, Shanghai, China in 1982. She works in Chagrin Falls, OH and specializes in Internal Medicine. Dr. Chen is affiliated with Cleveland Clinic and Hillcrest Hospital.
Yong Chen Photo 2

Yong Chen

Specialties:
Preventive Medicine
Occupational Medicine
General Preventive Medicine
Education:
Tianjin Med Coll, Tianjin, Tianjin, China (1983)
Yong Chen Photo 3

Yong Shin Chen

Specialties:
Anesthesiology
Surgery
Education:
Chung Shan Medical University (1969)

Publications & IP owners

Us Patents

Nanoscale Patterning For The Formation Of Extensive Wires

US Patent:
6407443, Jun 18, 2002
Filed:
Jun 20, 2001
Appl. No.:
09/886355
Inventors:
Yong Chen - Palo Alto CA
R. Stanley Williams - Mountain View CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 21336
US Classification:
257616, 257624, 257635, 257768
Abstract:
A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of the substrate; (c) cleaving the stack normal to its major surface to expose the plurality of alternating layers; and (d) etching the exposed plurality of alternating layers to a chosen depth using an etchant that etches one material at a different rate than the other material to thereby provide the surface with extensive strips of indentations and form the platen useful for molding masters for nano-imprinting technology. The pattern of the platen is then imprinted into a substrate comprising a softer material to form a negative of the pattern, which is then used in further processing to form nanowires. The nanoscale platen thus comprises a plurality of alternating layers of the two dissimilar materials, with the layers of one material etched relative the layers of the other material to form indentations of the one material.

Fabrication Of Molecular Electronic Circuit By Imprinting

US Patent:
6432740, Aug 13, 2002
Filed:
Jun 28, 2001
Appl. No.:
09/895601
Inventors:
Yong Chen - Palo Alto CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 5140
US Classification:
438 99, 438703
Abstract:
A method of fabricating a molecular electronic device or crossbar memory device is provided. The device comprises at least one pair of crossed wires and a molecular switch film therebetween. The method comprises: (a) forming at least one bottom electrode on a substrate by first forming a first layer on the substrate and patterning the first layer to form the bottom electrode by an imprinting technique; (b) forming the molecular switch film on top of the bottom electrode; (c) optionally forming a protective layer on top of the molecular switch film to avoid damage thereto during further processing; (d) coating a polymer layer on top of the protective layer and patterned the polymer layer by the imprinting method to form openings that expose portions of the protective layer; and (e) forming at least one top electrode on the protective layer through the openings in the polymer layer by first forming a second layer on the polymer layer and patterning the second layer. The imprinting method can be used to fabricate nanoscale patterns over a large area at high speeds acceptable in industrial standards. Consequently, it can be used to fabricate nanoscale molecular devices, e. g.

Epitaxial Material Grown Laterally Within A Trench And Method For Producing Same

US Patent:
6500257, Dec 31, 2002
Filed:
Apr 17, 1998
Appl. No.:
09/062028
Inventors:
Shih-Yuan Wang - Palo Alto CA
Changhua Chen - San Jose CA
Yong Chen - Mountain View CA
Scott W. Corzine - Sunnyvale CA
R. Scott Kern - San Jose CA
Assignee:
Agilent Technologies, Inc. - Palo Alto CA
International Classification:
C30B 2300
US Classification:
117 95, 438479
Abstract:
An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

Configurable Nanoscale Crossbar Electronic Circuits Made By Electrochemical Reaction

US Patent:
6518156, Feb 11, 2003
Filed:
Apr 25, 2000
Appl. No.:
09/558955
Inventors:
Yong Chen - Palo Alto CA
R. Stanley Williams - Mountain View CA
Assignee:
Hewlett-Packard Company - Palo Alto CA
International Classification:
H01L 2144
US Classification:
438597, 438598, 438957
Abstract:
Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of the configurable layer by oxidation or reduction methods, employing a solid material as the configurable layer. Specifically a method is provided for configuring nanoscale devices in a crossbar array of configurable devices comprising arrays of cross-points of a first layer of nanoscale lines comprising a first metal or a first semiconductor material crossed by a second layer of nanoscale lines comprising a second metal or a second semiconductor material. The method comprises: (a) forming the first layer on a substrate; (b) forming a solid phase of a configurable material on the first layer at least in areas where the second layer is to cross the first layer; (c) forming the second layer on the configurable material, over the first layer; and (d) changing a property of the configurable material to thereby configure the nanoscale devices.

Fabricating A Molecular Electronic Device Having A Protective Barrier Layer

US Patent:
6541309, Apr 1, 2003
Filed:
Mar 21, 2001
Appl. No.:
09/815844
Inventors:
Yong Chen - Redwood City CA
Assignee:
Hewlett-Packard Development Company LP - Houston TX
International Classification:
H01L 2144
US Classification:
438118, 438939, 438951, 365151
Abstract:
A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Molecular Memory Systems And Methods

US Patent:
6542400, Apr 1, 2003
Filed:
Mar 27, 2001
Appl. No.:
09/819402
Inventors:
Yong Chen - Redwood City CA
Robert G. Walmsley - Palo Alto CA
Assignee:
Hewlett-Packard Development Company LP - Houston TX
International Classification:
G11C 1100
US Classification:
365151, 365118, 365217
Abstract:
A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.

Fabrication Of Molecular Electronic Circuit By Imprinting

US Patent:
6579742, Jun 17, 2003
Filed:
Sep 26, 2001
Appl. No.:
09/964986
Inventors:
Yong Chen - Palo Alto CA
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 5140
US Classification:
438 99, 438703
Abstract:
A method of fabricating a molecular electronic device or crossbar memory device is provided. The device comprises at least one pair of crossed wires and a molecular switch film therebetween. The method comprises: (a) forming at least one bottom electrode on a substrate by first forming a first layer on the substrate and patterning the first layer to form the bottom electrode by an imprinting technique; (b) forming the molecular switch film on top of the bottom electrode; (c) optionally forming a protective layer on top of the molecular switch film to avoid damage thereto during further processing; (d) coating a polymer layer on top of the protective layer and patterned the polymer layer by the imprinting method to form openings that expose portions of the protective layer; and (e) forming at least one top electrode on the protective layer through the openings in the polymer layer by first forming a second layer on the polymer layer and patterning the second layer. The imprinting method can be used to fabricate nanoscale patterns over a large area at high speeds acceptable in industrial standards. Consequently, it can be used to fabricate nanoscale molecular devices, e. g.

Method To Grow Self-Assembled Epitaxial Nanowires

US Patent:
6656573, Dec 2, 2003
Filed:
Nov 13, 2001
Appl. No.:
10/008058
Inventors:
Yong Chen - Redwood City CA
R. Stanley Williams - Redwood City CA
Douglas A. A. Ohlberg - Mountain View CA
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
C30B 2910
US Classification:
428195, 428212, 428221, 428446, 117 84, 117105, 117106, 117108, 117939
Abstract:
Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other.

Amazon

Yong Chen Photo 47

The Wenchuan Earthquake Of 2008: Anatomy Of A Disaster

Author:
Yong Chen, David C. Booth
Publisher:
Springer
Binding:
Hardcover
Pages:
280
ISBN #:
3642211585
EAN Code:
9783642211584
"The Wenchuan Earthquake of 2008: Anatomy of a Disaster" gives a detailed account of the damage, seismology and tectonics of the event and discusses earthquake prediction, seismic hazard and risk management, the creation and implementation of building codes, and new practices used in rescue, relief ...
Yong Chen Photo 48

Chen Yongkeng - Selection Of Chinese Modern Masters Works (Chinese Edition)

Author:
Chen Yong Qiang
Publisher:
Peoples Fine Arts Publishing House
Binding:
Paperback
Pages:
56
ISBN #:
7102042442
EAN Code:
9787102042442
Yong Chen Photo 49

Introduction Guide [Paperback]

Author:
CHEN YONG FA
Publisher:
Unknown
Binding:
Paperback
ISBN #:
7542612476
EAN Code:
9787542612472
Yong Chen Photo 50

Additions And Corrections Of The Chronic Of Li Taibais Life (Chinese Edition)

Author:
lv hua ming. chen an yong. liu jin ping. zhu
Publisher:
Zhonghua Book Company
Binding:
Paperback
Pages:
199
ISBN #:
7101074529
EAN Code:
9787101074529
Yong Chen Photo 51

Swimming With Sharks (Trophy Chapter Books)

Author:
Twig C. George
Publisher:
HarperCollins
Binding:
Paperback
Pages:
128
ISBN #:
0060277572
EAN Code:
9780060277574
No TV, no friends, and a grandfather struggling with retirement from marine biology--Sarah's sure her stay in the Florida Keys will be the most boring summer of her life.That is, until she begins to take notice of the unusual-looking fish that visits her grandparents' dock every day. When Sarah disc...
Yong Chen Photo 52

A Gift

Author:
Yong Chen
Publisher:
Boyds Mills Pr
Binding:
Hardcover
Pages:
32
ISBN #:
1590786106
EAN Code:
9781590786109
A gift has come for Amy, all the way from China. The package has arrived just in time for Chinese New Year, the most important holiday in the Chinese culture. At this time of year, it's tradition to spend time with friends and family. Since Amy's aunt and uncles live China, and are unable to make a ...
Yong Chen Photo 53

Chinese San Francisco, 1850-1943: A Trans-Pacific Community (Asian America)

Author:
Yong Chen
Publisher:
Stanford University Press
Binding:
Paperback
Pages:
432
ISBN #:
0804745501
EAN Code:
9780804745505
Founded during the Gold Rush years, the Chinese community of San Francisco became the largest and most vibrant Chinatown in America. For those Chinese traveling between the Old World and the New, San Francisco was a port of entry and departure. Many Chinese settled there, forming one of the oldest c...
Yong Chen Photo 54

Chinese Idioms And Their English Equivalents

Author:
Chen and Dr. Spring Chen Yong-Zhen
Publisher:
Altai House
Binding:
Hardcover
ISBN #:
9620700430
EAN Code:
9789620700439

Isbn (Books And Publications)

Swimming With Sharks

Author:
Yong Chen
ISBN #:
0060277572

Swimming With Sharks

Author:
Yong Chen
ISBN #:
0060277580

Miz Fannie Mae'S Fine New Easter Hat

Author:
Yong Chen
ISBN #:
0316571598

Chinese San Francisco, 1850-1943: A Trans-Pacific Community

Author:
Yong Chen
ISBN #:
0804736057

Chinese San Francisco, 1850-1943: A Trans-Pacific Community

Author:
Yong Chen
ISBN #:
0804745501

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