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Yung Ping Chen, 941614 E Lynn St, Seattle, WA 98112

Yung Chen Phones & Addresses

Seattle, WA   

Waban, MA   

Wayne, PA   

Philadelphia, PA   

Havertown, PA   

Kiona, WA   

Havertown, PA   

Los Angeles, CA   

Work

Company: The Johns Hopkins Hospital Address: 1800 Orleans Street, Baltimore, MD 21287

Education

School / High School: Tufts University School Of Medicine 2001

Languages

English

Awards

Healthgrades Honor Roll

Ranks

Certificate: Diagnostic Radiology, 2006

Mentions for Yung Ping Chen

Career records & work history

Medicine Doctors

Yung Chen Photo 1

Dr. Yung Hsin Chen, Brockton MA - MD (Doctor of Medicine)

Specialties:
Diagnostic Radiology
Age:
50
Address:
235 N Pearl St, Brockton, MA 02301
508-4273110 (Phone) 508-4272538 (Fax)
31 Martin Rd, Wellesley Hills, MA 02481
600 N Wolfe St, Baltimore, MD 21287
410-9556369 (Phone)
Certifications:
Diagnostic Radiology, 2006
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
235 N Pearl St, Brockton, MA 02301
31 Martin Rd, Wellesley Hills, MA 02481
600 N Wolfe St, Baltimore, MD 21287
The Johns Hopkins Hospital
1800 Orleans Street, Baltimore, MD 21287
Education:
Medical School
Tufts University School Of Medicine
Graduated: 2001
Medical School
Brockton Hospital
Graduated: 2001
Medical School
Nassau University Med Center
Graduated: 2001
Medical School
John Hopkins
Graduated: 2001

Yung S. Chen

Specialties:
Family Medicine, Internal Medicine
Work:
Lake Country Family Medicine PA
8465 Boat Clb Rd STE 115, Fort Worth, TX 76179
817-2600535 (phone) 817-9841448 (fax)
Arlington Urgent Care
3295 S Cooper St STE 101, Arlington, TX 76015
817-5579616 (phone) 817-5579604 (fax)
Education:
Medical School
University of North Texas College of Osteopathic Medicine
Graduated: 1998
Procedures:
Destruction of Benign/Premalignant Skin Lesions, Skin Tags Removal, Vaccine Administration
Conditions:
Acne, Acute Bronchitis, Acute Conjunctivitis, Acute Pharyngitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Constipation, Contact Dermatitis, Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Otitis Media, Plantar Warts, Urinary Tract Infection (UT), Abnormal Vaginal Bleeding, Acute Sinusitis, Alopecia Areata, Anemia, Anxiety Phobic Disorders, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Bacterial Pneumonia, Bell's Palsy, Benign Prostatic Hypertrophy, Breast Disorders, Bronchial Asthma, Burns, Calculus of the Urinary System, Candidiasis, Chronic Bronchitis, Chronic Sinusitis, Cirrhosis, Croup, Depressive Disorders, Dermatitis, Deviated Nasal Septum, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Epilepsy, Erectile Dysfunction (ED), Gastroesophageal Reflux Disease (GERD), Glaucoma, Gout, Hearing Loss, Hemorrhoids, Herpes Genitalis, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Hypothyroidism, Infectious Diseases of the Brain or Spinal Cord, Infectious Mononucleosis, Influenza, Intervertebral Disc Degeneration, Menopausal and Postmenopausal Disorders, Migraine Headache, Osteoarthritis, Osteoporosis, Overweight and Obesity, Peptic Ulcer Disease, Peripheral Nerve Disorders, Pneumonia, Prostatitis, Psoriasis, Restless Leg Syndrome, Sciatica, Skin and Subcutaneous Infections, Tinea Pedis, Tinea Unguium, Undescended and Retractile Testicle, Urinary Incontinence, Uterine Leiomyoma
Languages:
English, Spanish, Vietnamese
Description:
Dr. Chen graduated from the University of North Texas College of Osteopathic Medicine in 1998. He works in Arlington, TX and 1 other location and specializes in Family Medicine and Internal Medicine.

Yung Cheng J. Chen

Specialties:
Psychiatry
Work:
Children & Youth Services Outpatient Mental Health Clinic
14140 Bch Blvd STE 155, Westminster, CA 92683
714-8957556 (phone) 714-8967564 (fax)
Education:
Medical School
Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71)
Graduated: 1976
Conditions:
Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Attention Deficit Disorder (ADD), Obsessive-Compulsive Disorder (OCD)
Languages:
English, French, Spanish
Description:
Dr. Chen graduated from the Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71) in 1976. He works in Westminster, CA and specializes in Psychiatry.
Yung Chen Photo 2

Yung Cheng Joseph Chen

Specialties:
Psychiatry
Child & Adolescent Psychiatry
Child Psychiatry
Education:
National Taiwan University (1976)
Yung Chen Photo 3

Yung Chuan Chen

Specialties:
Physical Medicine & Rehabilitation
Pain Medicine
Orthopaedic Surgery
Education:
Baylor College of Medicine (1994)
Yung Chen Photo 4

Yung Chen, Baltimore MD

Work:
Johns Hopkins University
600 N Wolfe St, Baltimore, MD 21287Good Samaritan Medical Center
235 N Pearl St, Brockton, MA 02301

Yung Chen resumes & CV records

Resumes

Yung Chen Photo 42

Yung Lin Chen

Yung Chen Photo 43

Yung Chen

Yung Chen Photo 44

Yung Chen

Yung Chen Photo 45

Yung Chen

Yung Chen Photo 46

At Bank Of Ny Mellon

Location:
United States
Industry:
Banking

Publications & IP owners

Us Patents

Ink Jet Recording Sheet

US Patent:
6068373, May 30, 2000
Filed:
Aug 16, 1999
Appl. No.:
9/375323
Inventors:
Yung T. Chen - Lexington MA
Gerald P. Harwood - Billerica MA
Michael S. Viola - Burlington MA
Assignee:
Polaroid Corporation - Cambridge MA
International Classification:
B41M 500
B41J 201
US Classification:
347105
Abstract:
An ink jet recording sheet comprises a support carrying an ink-receiving layer, this layer comprising a hydrophilic polymer, preferably poly(vinyl alcohol) and a poly(vinylbenzyl quaternary ammonium salt) of the formula: ##STR1## wherein each of R. sup. 1, R. sup. 2, R. sup. 3, R. sup. 4, R. sup. 5 and R. sup. 6 is independently alkyl of from 1 to 4 carbon atoms; each of R. sup. 7, R. sup. 8 and R. sup. 9 is independently alkyl of from 1 to 18 carbon atoms and the total number of carbon atoms in R. sup. 7, R. sup. 8 and R. sup. 9 is from 13 to 20; each M. sup. - is an anion; and each of a, b and c is the molar proportion of the respective repeating units.

High Frequency Light Modulation Device

US Patent:
4451123, May 29, 1984
Filed:
Dec 20, 1982
Appl. No.:
6/451647
Inventors:
William H. McNeill - Carlisle MA
Yung J. Chen - Weston MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
G05D 2502
US Classification:
350386
Abstract:
An electrooptic device for controlling the intensity of a monochromatic light beam comprises a first transparent element such as a triangular prism or hemicylindrical prism having a planar surface. A thin layer of a material such as a metal is in contact with the planar surface of the transparent element and a semiconductor material is adjacent to the metal layer. A voltage source provides a potential difference between the metal layer and the semiconductor material to alter the charge density in the semiconductor material to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within the device to correspondingly control the intensity of the light beam exiting the device.

Ink Jet Recording Sheet

US Patent:
5856023, Jan 5, 1999
Filed:
Jan 7, 1997
Appl. No.:
8/779802
Inventors:
Yung T. Chen - Lexington MA
Gerald P. Harwood - Billerica MA
Michael S. Viola - Burlington MA
Assignee:
Polaroid Corporation - Cambridge MA
International Classification:
B41M 500
US Classification:
428520
Abstract:
An ink jet recording sheet comprises a support carrying an ink-receiving layer, this layer comprising a mixture of a derivatized (preferably acetoacetylated) poly(vinyl alcohol) and a non-derivatized poly(vinyl alcohol). The ink-receiving layer preferably also comprises a poly(vinylbenzyl quaternary ammonium salt) and poly(vinylpyrrolidone).

Ink Jet Recording Sheet

US Patent:
6003989, Dec 21, 1999
Filed:
Aug 21, 1998
Appl. No.:
9/137594
Inventors:
Yung T. Chen - Lexington MA
Gerald P. Harwood - Billerica MA
Michael S. Viola - Burlington MA
Assignee:
Polaroid Corporation - Cambridge MA
International Classification:
B41M 500
US Classification:
347105
Abstract:
An ink jet recording sheet comprises a support carrying an ink-receiving layer, this layer comprising a mixture of a derivatized (preferably acetoacetylated) poly(vinyl alcohol) and a non-derivatized poly(vinyl alcohol). The ink-receiving layer preferably also comprises a poly(vinylbenzyl quaternary ammonium salt) and poly(vinylpyrrolidone).

High Frequency Light Modulator

US Patent:
4432614, Feb 21, 1984
Filed:
Dec 20, 1982
Appl. No.:
6/451646
Inventors:
William H. McNeill - Carlisle MA
Yung J. Chen - Weston MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
G05D 2502
US Classification:
350386
Abstract:
An electrooptic device for controlling the intensity of a monochromatic light beam comprises a transparent element having opposed planar surfaces operable to reflect a collimated light beam alternately from the two surfaces. A plurality of semiconductor structures contact one surface of the device at regions where the collimated light beam reflects from that surface. Each semiconductor structure includes a thin layer of a material such as a metal in contact with the planar surface of the transparent element and a semiconductor material adjacent to the metal layer. A voltage source provides a potential between the metal layer and the semiconductor material of each structure to separately alter the charge density in the semiconductor material of each structure to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within each structure. The device is operable as a signal mixer or an optical logic switching device.

High Density Mnos Transistor With Ion Implant Into Nitride Layer Adjacent Gate Electrode

US Patent:
4481527, Nov 6, 1984
Filed:
May 26, 1983
Appl. No.:
6/489461
Inventors:
Yung J. Chen - Weston MA
Rick K. Hodgman - Palos Verdes Peninsula CA
Assignee:
McDonnell Douglas Corporation - Long Beach CA
International Classification:
H01L 2978
H01L 2934
US Classification:
357 23
Abstract:
High density, simplified fabrication and the elimination of sidewalk leakage effects are achieved by the implementation of a self-aligned ion-implantation step during the fabrication of the MNOS transistor wherein, after the formation of the gate electrode of the transistor, low energy ions are implanted within the nitride layer of the MNOS transistor in the regions of the nitride layer adjacent to the gate electrode.

Ink Jet Recording Sheet

US Patent:
6010790, Jan 4, 2000
Filed:
Jan 7, 1997
Appl. No.:
8/780475
Inventors:
Yung T. Chen - Lexington MA
Gerald P. Harwood - Billerica MA
Michael S. Viola - Burlington MA
Assignee:
Polaroid Corporation - Cambridge MA
International Classification:
B41M 500
US Classification:
4284111
Abstract:
An ink jet recording sheet comprises a support carrying an ink-receiving layer, this layer comprising a hydrophilic polymer, preferably poly(vinyl alcohol) and a poly(vinylbenzyl quaternary ammonium salt) of the formula: ##STR1## wherein each of R. sup. 1, R. sup. 2, R. sup. 3, R. sup. 4, R. sup. 5 and R. sup. 6 is independently alkyl of from 1 to 4 carbon atoms; each of R. sup. 7, R. sup. 8 and R. sup. 9 is independently alkyl of from 1 to 18 carbon atoms and the total number of carbon atoms in R. sup. 7, R. sup. 8 and R. sup. 9 is from 13 to 20; each M. sup. - is an anion; and each of a, b and c is the molar proportion of the respective repeating units.

Nonvolatile Memory Sensing System

US Patent:
4434479, Feb 28, 1984
Filed:
Nov 2, 1981
Appl. No.:
6/317007
Inventors:
Yung J. Chen - Weston MA
Eden Y. C. Mei - Huntington Beach CA
Assignee:
McDonnell Douglas Corporation - Long Beach CA
International Classification:
G11C 1140
US Classification:
365210
Abstract:
A sensing system for a nonvolatile memory transistor array employs reference transistors which are substantially identical to the memory transistors within the array and employs means to program the threshold voltage levels of the reference transistors to a lower level than that of the memory transistors within the array such that the changes in the electrical characteristics of both the memory and the reference transistors are proportional over time, the system thereby being rendered self-tracking.

Isbn (Books And Publications)

Semiconductor Lasers And Applications Ii

Author:
Yung Jui Chen
ISBN #:
0819455830

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